Supply of a Plasma Etch Tool for Silicon Carbide (Sic) Etching

GreatbritainTenders notice for Supply of a Plasma Etch Tool for Silicon Carbide (Sic) Etching. The reference ID of the tender is 50300723 and it is closing on 18 Mar 2021.

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Tender Details

  • Country: United Kingdom
  • Summary: Supply of a Plasma Etch Tool for Silicon Carbide (Sic) Etching
  • GBT Ref No: 50300723
  • Deadline: 18 Mar 2021
  • Competition: ICB
  • Financier: Self Financed
  • Purchaser Ownership: -
  • Tender Value: Refer Document
  • Notice Type: Tender
  • Document Ref. No.: FEB358993
  • Purchaser's Detail :
  • Purchaser : SWANSEA UNIVERSITY
    Swansea University
    Procurement - VC's Office, Swansea University, Singleton Park
    Swansea
    SA2 8PP
    UK
    Telephone : +44 1792602779
    E-mail : procurement@swansea.ac.uk
    NUTS : UKL18
    Internet address(es)
    Main address : www.swansea.ac.uk
    Address of the buyer profile : https : //www.sell2wales.gov.wales/search/Search_AuthProfile.aspx?ID=AA0345

    Email :procurement@swansea.ac.uk
    URL :www.swansea.ac.uk

  • Description :
  • This Tender Specification is for the supply and delivery of a Plasma Etch Tool for SiC etching. In procuring this system, the University is seeking to augment its well-established existing plasma etch and deposition tool set, expanding the capabilities that the CISM will be able to provide.

    Title: Supply of a Plasma Etch Tool for Silicon Carbide (SiC) Etching
    Published by: Swansea University
    Publication Date: 16/02/2021
    Deadline Date: 18/03/2021
    Deadline Time: 12:00
    Notice Type: 02 Contract Notice
    Has Documents: No
    Has ESPD: No
    Abstract: This Tender Specification is for the supply and delivery of a Plasma Etch Tool for SiC etching. In procuring this system, the University is seeking to augment its well-established existing plasma etch and deposition tool set, expanding the capabilities that the CISM will be able to provide.The new tool will be of strategic importance in delivering both frontside SiC etch capability for power MOSFET trench applications, and backside SiC via etch capability for GaN-on-SiC device applications. Reliability of the equipment is therefore paramount to maintaining, supporting and complimenting the wide array of experimental work that will be conducted within the facility.CPV: 38000000, 38900000, 38970000, 39180000.


    Estimated total value: Value excluding VAT: 1 000 000.00 GBP
  • Documents :
  •  Tender Notice

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