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Tender Details
- Country: United Kingdom
- Summary: Dual-Growth Chamber Molecular Beam Epitaxy System (2 Lots)
- GBT Ref No: 114438116
- Deadline: 14 Mar 2025
- Competition: ICB
- Financier: Self Financed
- Purchaser Ownership: Public
- Tender Value: 4750000
- Notice Type: Tender
- Document Ref. No.: 4420/DM/25
- Purchaser's Detail :
- Description :
- The EPSRC National Epitaxy Facility (NEF) based at the University of Sheffield has been providing bespoke semiconductor wafers to academia and industry for 45 years. It is a unique world-class centre combining technical excellence and expertise with state-of-the-art epitaxy and material characterization equipment.
We are looking to further enhance our capability provision to the UK semiconductor community, by investing in a new linked dual-chamber Molecular Beam Epitaxy (MBE) System for arsenides/phosphides and arsenides/antimonides growth that is fully automated, capable of 24/7 operation, reliable, and resource-efficient allowing further expansion in the future.
The system is replacing two existing VG reactors capable of 4" wafer growth of high-quality arsenides/phosphides and arsenides/antimonides, and should offer higher throughput thanks to automation of growth recipes for 24/7 operation, and integrated solutions allowing maintenance of critical components (such as ion gauges, cells) without breaking chamber vacuum.
This tender is divided into 2 Lots:
(Suppliers may bid for one or both Lots)
Lot 1 - MBE System
Lot 2 - In-situ monitoring equipment - Documents :
Purchaser : UNIVERSITY OF SHEFFIELD
WESTERN BANK SHEFFIELD S102TN England
Contact Person : David Middle
Email :dave.middle@sheffield.ac.uk
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